The 2nd stage of government-funded SiGe Epi R&D project successfully completed by Epiel and accepted by the customer
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17.12.2010
The project encompasses material research as well as equipment and process investigations with the ultimate goal to elaborate a production technology for 200 mm SiGe Epitaxial wafers applied in 250-180 nm design node BiCMOS ICs.
The project is to be completed by December 2011.