Hydride-Chloride Epitaxy of High-Resistivity Si Layers on High-Doped Wafers
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Abstract — High-resistivity silicon layers were deposited on different high-doped wafers with arsenic, antimony and boron doping. The Si-layers were formed at 950-1050 °C with various vapor-gas mixture composition: SiH4, SiH4+SiCl4, SiH4+SiHCl3, SiHCl3. Resistivity thickness profile was measured by spreading resistance probe (SRP) method. Unusual resistivity profile incline was detected for isotype junction. It was found that the phenomenon of doping segregation appears when Si-layers deposit on arsenic high-doped wafers. To our knowledge, arsenic segregation in relation to autodoping phenomenon was studied for the first time. It was discovered that the increase of growth rate and HCl etching procedure change the incline of SRPprofile. Pre-epitaxy wafer annealing allowed to decrease the concentration of arsenic on wafer surface.
Author(s):
Evgeniy M. Sokolov, Vladimir N. Statsenko, Dmitry V. Tarasov, Sergey D. Fedotov
