EPIwafers for ELectronics
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Silicon Epitaxial Wafers

Silicon Epitaxial Wafers

Silicon Epitaxial Wafers are the core material used in manufacturing of a wide range of semiconductor devices with applications in consumer, industrial and space electronics.

Epiel provides a variety of production proven and industry standard Silicon Epitaxy process technologies for some of the most essential microelectronics applications:


  • Schottky diodes
  • Ultra-fast diodes
  • Zener diodes
  • PIN diodes
  • Transient Voltage Suppressors (TVS)
  • and other


  • Power IGBT
  • Power DMOS
  • Medium power
  • Small-signal
  • and other

Integrated Circuits

  • Bipolar ICs
  • Amplifiers
  • Microprocessors
  • Microcontrollers
  • RFID
  • and other

To Integrated Circuit manufacturers Epiel offers Silicon Epitaxial Deposition Services on substrates with burried ion-implanted or diffused layers.

Silicon substrates are either purchased from major global vendors or supplied by customer.



Contact Sales

Phone: +7 (499) 995 0049
E-mail: sales@epiel.ru

Parameters range for Silicon Epi Wafers
Wafer diameter 76 mm, 100 mm, 150 mm, 200 mm
Orientation (111), (100)
Substrate dopant Antimony, Boron, Arsenic
Epi-layer thickness, µm 3,0 – 150
Epi-layer dopant Phosphorous, Boron, Arsenic
Epi-layer resistivity, Ohm.cm
n-type 0,01 – 500
p-type 0,01 – 100
Single-layer structure types n-n+, p-n+, p-p+, n-p+
Double-layer structure types n1-n2-n+, n1-n2-p+, n-p-n+, p-n-p
Buried Layer Epi Up to 3 buried layers

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124460, Academic Valiyev str. 6, bld.2, Zelenograd, Moscow, Russia (on map)
Phone/Fax: +7 (499) 995 0049